050-7476 rev a 11-2005 apt25gp90bdq1(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 350a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 125c) collector cut-off current (v ce = 900v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 900v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt25gp90bdq1(g) 900 30 7236 110 110a @ 900v 417 -55 to 150 300 unit volts amps watts c parametercollector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.advancedpower.com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 900 3 4.5 6 3.2 3.9 2.7 350 1000 100 900v apt25gp90bdq1 APT25GP90BDQ1G* *g denotes rohs compliant, pb free terminal finish. ? c e g the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? ssoa rated ? low gate charge ? ultrafast tail current shutoff power mos 7 ? igbt t o - 2 4 7 g c e downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode.5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the speci?cations and information contained herein . thermal and mechanical characteristics unit c/w gm characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 450v i c = 40a t j = 150c, r g = 4.3 ?, v ge = 15v, l = 100h,v ce = 900v inductive switching (25c) v cc = 600v v ge = 15v i c = 40a r g = 4.3 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 40a r g = 4.3 ? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 2100 220 40 7.5 110 16 47 110 13 16 55 55 tbd 740 370 13 16 95 95 tbd 1120 750 unit pf v nc a ns j ns j min typ max .30 1.18 5.9 downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) v ce = 720v i c = 25a t j = 25c 250s pulse test<0.5 % duty cycle 100 8060 40 20 0 120100 8060 40 20 06 5 4 3 2 1 0 1.101.05 1.00 0.95 0.90 0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 2 4 6 8 10 0 20 40 60 80 100 120 6 8 10 12 14 16 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 100 8060 40 20 0 1614 12 10 86 4 2 0 4 3.5 3 2.5 2 1.5 1 0.5 0 100 8060 40 20 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction tem perature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temper ature t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 50a i c = 25a i c = 12.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 50a i c = 25a i c = 12.5a t j = 125c t j = 25c t j = -55c v ge = 15v t j = 125c t j = 25c t j = -55c v ce = 450v v ce = 180v downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 600v r g = 4.3 ? l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junc tion temperature v ce = 600v v ge = +15v r g = 4.3 ? r g = 4.3 ? , l = 100 h, v ce = 600v v ce = 600v t j = 25c , or 125c r g = 4.3 ? l = 100h 1816 14 12 10 86 4 2 0 50 40 30 20 10 0 30002500 2000 1500 1000 500 0 40003500 3000 2500 2000 1500 1000 500 0 100 8060 40 20 0 120100 8060 40 20 0 25002000 1500 1000 500 0 30002500 2000 1500 1000 500 0 v ge = 15v t j = 125c, v ge = 15v t j = 25 or 125c,v ge = 15v t j = 25c, v ge = 15v t j = 125c t j = 25c v ce = 600v v ge = +15v r g = 4.3 ? t j = 125c t j = 25c v ce = 600v v ge = +15v r g = 4.3 ? v ce = 600v v ge = +15v t j = 125c 10 20 30 40 50 60 10 20 30 40 50 60 10 20 30 40 50 60 10 20 30 40 50 60 10 20 30 40 50 60 10 20 30 40 50 60 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3 ? , l = 100 h, v ce = 600v e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) typical performance curves 0.350.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 5,0001,000 500100 5010 120100 8060 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operatin g area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 900 1000 figure 19b, transient thermal impedance model 5 15 25 35 45 55 65 75 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50%v ce = 600v r g = 4.3 ? 270100 5010 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies 0.1310.168 0.008520.154 rc model case temperature( c) junction temp ( c) power (watts) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt15dq100 i c a d.u.t. v ce figure 21, inductive switching test circui t v cc downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) typical performance curves characteristic / test conditionsmaximum average forward current (t c = 126c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f ( av ) i f ( rms ) i fsm symbol v f characteristic / test conditions i f = 25a forward voltage i f = 50a i f = 25a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.9 3.6 2.35 apt25gp90bqdq1g) 1529 80 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 20 - 235 - 185 - 3 - - 300 - 810 - 6 - - 125 - 1150 - 19 unit ns nc amps ns nc amps ns nc amps characteristicreverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 667v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 667v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 667v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 24a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration figure 24b, transient thermal impedance model z jc , thermal impedance (c/w) 1.201.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 d = 0.9 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0.676 0.504 0.001470.0440 power (watts) rc model junction temp ( c) case temperature ( c) downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) t j = 125 c v r = 667v 7.5a 15a 30a t rr q rr q rr t rr i rrm 400350 300 250 200 150 100 50 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 3530 25 20 15 10 50 1.21.0 0.8 0.6 0.4 0.2 0.0 8070 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 29. dynamic parameters vs. junction temperature figure 30. maximum average fo rward current vs. casetemperature v r , reverse voltage (v) figure 31. junction capacitance vs. reverse voltage 4540 35 30 25 20 15 10 50 20001800 1600 1400 1200 1000 800600 400 200 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 25. forward current vs. forward voltage figure 26. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 27. reverse recovery charge vs. current rate of change figure 28. reverse recovery cu rrent vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 125 c v r = 667v t j = 175 c t j = -55 c t j = 25 c t j = 125 c 0 1 2 3 4 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 125 c v r = 667v 30a 7.5a 15a 30a 15a 7.5a 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 downloaded from: http:///
050-7476 rev a 11-2005 apt25gp90bdq1(g) typical performance curves 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 32. diode test circuit figure 33, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign p atents. us and foreign patents pending. all rights reserved. to - 247 package outline e1 sac: tin, silver, copper apt10035lll 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector (cathode) emitter (anode) gate collector (cathode) downloaded from: http:///
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